CMP series
- The post-CMP cleaning solutions that can efficiently clean metallic impurities, particles, and organic substances remaining on wafers after CMP without damaging a variety of metallic materials and interlayer dielectrics.
Product Line
| Products | Applicable process | pH | Features |
|---|---|---|---|
| CMP-M02 | Cu-CMP W-CMP |
Acidic | ・Standard acid cleaning solution ・High metallic impurity removal performance |
| CMP-M200 series | W-CMP | Acidic | ・High organic residue removal performance ・Also removes fine particles |
| CMP-B200 series | Cu-CMP Co-CMP |
Alkaline | ・High organic residue removal performance ・Applicable to a variety of barrier metals (Ta, Ti, Co, and Ru) |
| CMP-B300 series | STI-CMP, ILD-CMP | Acidic | ・High ceria slurry removal performance ・Inhibits damage to dielectrics and W |
| CMP-ML series | Co-CMP Mo-CMP |
Mildly acidic – Mildly alkaline |
・High silica slurry removal performance |
| CMP-M302 |
SiC-CMP |
Acidic |
・High Mn-based slurry removal performance |
Features
CMP-M02
- CMP-M02 can be used for a post-CMP cleaning solution for Cu-CMP and W-CMP.
- The cleaning solution with high capability to remove metallic impurities.
- It causes almost no damage to wiring materials, etc.
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 |
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|---|---|---|---|---|
| Before cleaning |
30 times diluted |
50 times diluted |
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| Cleaning evaluation of forcibly contaminated wafers with CMP slurry | ||||
CMP-M200 series
- CMP-M200 series can be used for a post-CMP cleaning solution for W-CMP.
- The cleaning solutions with high capability to remove fine particles and organic residues on W, TEOS, and SiN.
- This series of products cause almost no damage to wiring materials, etc.
Defect map after post-CMP cleaning on SiN wafer
CMP-B200 series
- CMP-B200 series can be used for a post-CMP cleaning solution for Cu-CMP.
- The cleaning solutions with high capability to remove particles and organic residues on Cu.
- This series of products cause almost no damage to wiring materials, etc.
Defect map after post-CMP cleaning on Cu blanket wafer
CMP-B300 series
- CMP-B300 series can be used for a post-CMP cleaning solution for ceria slurries.
- The cleaning solutions with very high ceria abrasive removal capability after STI-CMP and ILD-CMP.
- The damage to dielectrics can be inhibited compared to DHF.
Ce concentration after post-CMP cleaning
CMP-M302
- CMP-M302 can be used for a post-CMP cleaning solution for Mn-based slurries.
- The cleaning solution with high capability to remove Mn-based residue.
Surface Mn concentration before and after cleaning
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