CMP series
- The post-CMP cleaning solutions that can efficiently clean metallic impurities, particles, and organic substances remaining on wafers after CMP without damaging a variety of metallic materials and interlayer dielectrics.
Product Line
| Products | Applicable process | pH | Features |
|---|---|---|---|
| CMP-M02 | Cu-CMP W-CMP |
Acidic | ・High metallic impurity removal performance |
| CMP-M200 series | W-CMP | Acidic | ・High organic residue removal performance ・Also removes fine particles |
| CMP-M300 series (開発品) |
Cu-CMP W-CMP |
Acidic | ・CMP-M02よりも高いパーティクル除去性 |
| CMP-B200 series | Cu-CMP Co-CMP |
Alkaline | ・High organic residue removal performance ・Applicable to a variety of barrier metals (Ta, Ti, Co, and Ru) |
| CMP-B300 series | STI-CMP, ILD-CMP | Acidic | ・High ceria slurry removal performance ・Inhibits damage to dielectrics and W |
| CMP-ML series (開発品) |
Co-CMP | Mildly acidic – Mildly alkaline |
・High organic residue removal performance |
Features
CMP-M02
- CMP-M02はCu-CMP、W-CMP後の後洗浄液として利用可能です。
- ウェハ上の金属不純物の除去能力が高い製品です。
- その他配線材料等にはほとんどダメージを与えません。
CMPスラリーで強制汚染したウェハ表面の洗浄状態（パーティクルサイズ：＞100nm）
CMP-M200 series
- CMP-M200シリーズはW-CMP後用洗浄液です。
- W、SiN上の微小パーティクル、有機残渣の除去能力が高い製品です。
- その他の配線材料等にはほとんどダメージを与えません。
CMP後洗浄液後のディフェクトマップ（SiNベタ膜）
CMP-B200 series
- The cleaning solutions with high capability to remove particles and organic residues on Cu.
- This series of products cause little damage to other wiring materials and barrier metals.
CMP後洗浄液後のディフェクトマップ（SiNベタ膜）
CMP-B300 series
- The cleaning solutions with very high ceria abrasive removal capability after STI-CMP and ILD-CMP.
- The damage to dielectrics can be inhibited compared to DHF.
CMP後洗浄液後の表面Ce金属濃度
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